Silicon and Silicon/Germanium Epitaxial Wafers
| Location: | Federal |
|---|---|
| Posted: | May 6, 2026 |
| Due: | May 12, 2026 |
| Agency: | COMMERCE, DEPARTMENT OF |
| Type of Government: | Federal |
| Category: |
|
| Solicitation No: | 1333ND26QNB030152 |
| Publication URL: | To access bid details, please log in. |
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- Contract Opportunity Type: Solicitation (Updated)
- Updated Published Date: May 06, 2026 09:40 am EDT
- Original Published Date: Apr 27, 2026 02:13 pm EDT
- Updated Date Offers Due: May 12, 2026 01:00 pm EDT
- Original Date Offers Due: May 12, 2026 01:00 pm EDT
- Inactive Policy: 15 days after date offers due
- Updated Inactive Date: May 27, 2026
- Original Inactive Date: May 27, 2026
-
Initiative:
- None
- Original Set Aside: Total Small Business Set-Aside (FAR 19.5)
- Product Service Code: 3670 - SPECIALIZED SEMICONDUCTOR, MICROCIRCUIT, AND PRINTED CIRCUIT BOARD MANUFACTURING MACHINERY
-
NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
-
Place of Performance:
This solicitation is being amended again to answer public questions raised. The questions and the NIST response have been addressed as an updated attachment.
No additonal changes have been made.
This solicitation is being amended to answer public questions raised and to update a minimum specification.
Question 1: For line items 1-7, could you please confirm the substrate diameter?
Answer 1: The substrate diameter is 100 mm.
Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy).
Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films).
Minimum specification addition: For SiGe films, the composition tolerance is 5 atomic percent. For example Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05, and a film with a composition of Si0.67Ge0.33 would be within specification for a nominal Si0.70Ge0.30 requirement.
No additional changes have been made.
Please see attached document.
- ACQUISITION MANAGEMENT DIVISION 100 BUREAU DR.
- GAITHERSBURG , MD 20899
- USA
- Erik Frycklund
- erik.frycklund@nist.gov
- May 06, 2026 09:40 am EDTSolicitation (Updated)
- Apr 30, 2026 09:08 am EDT Solicitation (Updated)
- Apr 27, 2026 02:13 pm EDT Solicitation (Original)
Related Document
| Apr 27, 2026 | [Solicitation (Original)] Silicon and Silicon/Germanium Epitaxial Wafers |
| Apr 30, 2026 | [Solicitation (Updated)] Silicon and Silicon/Germanium Epitaxial Wafers |
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Bid Due: 3/02/2027