Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

Location:	Ohio
Posted:	Oct 13, 2026
Due:	Oct 16, 2026
Agency:	NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Type of Government:	Federal
Category:	59 - Electrical and Electronic Equipment Components
Solicitation No:	80NSSC27946811Q
Publication URL:	To access bid details, please log in.

Active

Contract Opportunity

Notice ID

80NSSC27946811Q

Related Notice

Department/Ind. Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

General Information

Contract Opportunity Type: Special Notice (Original)
Original Published Date: Oct 13, 2026 03:21 pm CDT
Original Response Date: Oct 16, 2026 04:00 pm CDT
Inactive Policy: 15 days after response date
Original Inactive Date: Oct 31, 2026
Initiative:
- None

Classification

Original Set Aside:
Product Service Code: 5961 - SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
Place of Performance:
Cleveland , OH 44135

USA

Description

NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement.

VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT.

NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by

NASA’s Technical End User Team. We are currently only requesting Capability Statements.

Attachments/Links

Contact Information

Contracting Office Address

Primary Point of Contact

Lindsey McLellan
lindsey.m.mclellan@nasa.gov

Secondary Point of Contact

Karen Artis
Karen.L.Artis@nasa.gov

History

Oct 13, 2026 03:21 pm CDTSpecial Notice (Original)

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Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

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