Gallium Nitride Diode Wafer Fabrication

Location: Massachusetts
Posted: Jun 27, 2025
Due: Jul 14, 2025
Agency: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Type of Government: Federal
Category:
  • A - Research and development
Solicitation No: 80GRC025CA030
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Gallium Nitride Diode Wafer Fabrication
Active
Contract Opportunity
Notice ID
80GRC025CA030
Related Notice
Department/Ind. Agency
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
General Information
  • Contract Opportunity Type: Special Notice (Original)
  • Original Published Date: Jun 27, 2025 04:21 pm EDT
  • Original Response Date: Jul 14, 2025 12:00 pm EDT
  • Inactive Policy: 15 days after response date
  • Original Inactive Date: Jul 29, 2025
  • Initiative:
    • None
Classification
  • Original Set Aside: No Set aside used
  • Product Service Code: AR11 - SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH
  • NAICS Code:
    • 541715 - Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)
  • Place of Performance:
    Tewksbury , MA 01876
    USA
Description

NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn’t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.



NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.



The Government does not intend to acquire a commercial product or commercial service using FAR Part 12.



Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Hunter Butkovic (hunter.c.butkovic@nasa.gov) not later than 12:00pm ET on July 14, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.



NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf


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Contact Information
Contracting Office Address
  • US
Primary Point of Contact
Secondary Point of Contact
History
  • Jun 27, 2025 04:21 pm EDTSpecial Notice (Original)

Related Document

Aug 13, 2025[Special Notice (Updated)] Gallium Nitride Diode Wafer Fabrication
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