TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination

Location: California
Posted: Jul 7, 2025
Due: Aug 7, 2025
Agency: ENERGY, DEPARTMENT OF
Type of Government: Federal
Category:
  • 99 - Miscellaneous
  • S - Utilities and Training Services
Solicitation No: IL-13828
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TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination
Active
Contract Opportunity
Notice ID
IL-13828
Related Notice
Department/Ind. Agency
ENERGY, DEPARTMENT OF
Sub-tier
ENERGY, DEPARTMENT OF
Office
LLNS – DOE CONTRACTOR
General Information
  • Contract Opportunity Type: Special Notice (Original)
  • Original Published Date: Jul 07, 2025 09:34 am PDT
  • Original Response Date: Aug 07, 2025 11:00 am PDT
  • Inactive Policy: 15 days after response date
  • Original Inactive Date: Aug 22, 2025
  • Initiative:
Classification
  • Original Set Aside:
  • Product Service Code:
  • NAICS Code:
    • 334413 - Semiconductor and Related Device Manufacturing
  • Place of Performance:
    Livermore , CA
    USA
Description

Opportunity:



Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination.



Background:



A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses.



Description:



LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations.





Advantages/Benefits:




  • Value Proposition: Improved performance of SOS diodes

  • Vital for compact high voltage pulse generators





Potential Applications:




  • Pulsed-power physics

  • Compact high voltage pulse generators

  • High power electronics





Development Status:



Current stage of technology development: TRL ☐ 0-2 ☒ 3-5 ☐ 5-9



LLNL has filed for patent protection on this invention.



LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.





Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process.





Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following:




  1. Company Name and address.

  2. The name, address, and telephone number of a point of contact.

  3. A description of corporate expertise and/or facilities relevant to commercializing this technology.





Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination.



The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below.



Written responses should be directed to:



Lawrence Livermore National Laboratory



Innovation and Partnerships Office



P.O. Box 808, L-779



Livermore, CA 94551-0808



Attention: IL-13828


Attachments/Links
Contact Information
Contracting Office Address
  • 7000 East Avenue
  • Livermore , CA 94551
  • USA
Primary Point of Contact
Secondary Point of Contact
History
  • Jul 07, 2025 09:34 am PDTSpecial Notice (Original)
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