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Gallium Nitride Diode Wafer Fabrication

Location:	Massachusetts
Posted:	Sep 30, 2025
Agency:	NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Type of Contract:	Awards
Type of Government:	Federal
Category:	59 - Electrical and Electronic Equipment Components
Solicitation No:	80GRC025PA002
Publication URL:	To access bid details, please log in.

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Gallium Nitride Diode Wafer Fabrication

Active

Contract Opportunity

Notice ID

80GRC025PA002

Related Notice

Contract Line Item Number

Department/Ind. Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Sub-tier

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Office

NASA GLENN RESEARCH CENTER

Award Details

Contract Award Date: Sep 26, 2025
Contract Award Number: 80GRC025P0002
Task/Delivery Order Number:

Contractor Awarded Unique Entity ID: LWF3QUSCDNG1

Contractor Awarded Name: RAYTHEON COMPANY
Contractor Awarded Address: Tewksbury , MA 01876 USA
Base and All Options Value (Total Contract Value): $273,770.00

General Information

Contract Opportunity Type: Award Notice (Original)
Original Published Date: Sep 30, 2025 12:20 pm EDT
Inactive Policy: Manual
Original Inactive Date: Oct 29, 2025
Initiative:
- None

Classification

Original Set Aside: No Set aside used
Product Service Code: 5961 - SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
NAICS Code:
- 334413 - Semiconductor and Related Device Manufacturing
Place of Performance:
Tewksbury , MA

USA

Description

Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030.

The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.

Attachments/Links

Contact Information

Contracting Office Address

21000 BROOKPARK ROAD
CLEVELAND , OH 44135
USA

Primary Point of Contact

Ian Park
ian.park@nasa.gov

Secondary Point of Contact

Hunter Butkovic
hunter.c.butkovic@nasa.gov

History

Sep 30, 2025 12:20 pm EDTAward Notice (Original)

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