Gallium Nitride Diode Wafer Fabrication

Location: Massachusetts
Posted: Sep 30, 2025
Agency: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Type of Contract: Awards
Type of Government: Federal
Category:
  • 59 - Electrical and Electronic Equipment Components
Solicitation No: 80GRC025PA002
Publication URL: To access bid details, please log in.
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Gallium Nitride Diode Wafer Fabrication
Active
Contract Opportunity
Notice ID
80GRC025PA002
Related Notice
Contract Line Item Number
Department/Ind. Agency
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Sub-tier
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Office
NASA GLENN RESEARCH CENTER
Award Details
  • Contract Award Date: Sep 26, 2025
  • Contract Award Number: 80GRC025P0002
  • Task/Delivery Order Number:
  • Contractor Awarded Unique Entity ID: LWF3QUSCDNG1
  • Contractor Awarded Name: RAYTHEON COMPANY
  • Contractor Awarded Address: Tewksbury , MA 01876 USA
  • Base and All Options Value (Total Contract Value): $273,770.00
General Information
  • Contract Opportunity Type: Award Notice (Original)
  • Original Published Date: Sep 30, 2025 12:20 pm EDT
  • Inactive Policy: Manual
  • Original Inactive Date: Oct 29, 2025
  • Initiative:
    • None
Classification
  • Original Set Aside: No Set aside used
  • Product Service Code: 5961 - SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
  • NAICS Code:
    • 334413 - Semiconductor and Related Device Manufacturing
  • Place of Performance:
    Tewksbury , MA
    USA
Description

Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030.



The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.


Attachments/Links
Contact Information
Contracting Office Address
  • 21000 BROOKPARK ROAD
  • CLEVELAND , OH 44135
  • USA
Primary Point of Contact
Secondary Point of Contact
History
  • Sep 30, 2025 12:20 pm EDTAward Notice (Original)
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